| Dual growth chamber, 150 mm substrate, molecular beam epitaxy system.
Right growth chamber for MBE growth of GeSi layers. Chamber incorporates two feedback controlled electron gun evaporation sources and a variety of analytical sensors. It is connected to the dual low energy ion doping system below. Center chamber for sample loading and focused ion beam patterning, Left growth chamber for self-assembly of molecular organic layers on silicon. Chamber incorporates a variety of custom low temperature molecular delivery systems as well as a special IR sample heater. | 
