John C. Bean - Publications
 
  1. Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies, T.J. Magee, J. Peng and J.C. Bean, Proc. 32nd Meet. Electron. Microscopy Soc. of Amer., C. J. Arcneaux Ed., Claitor, Baton Rouge (1974)

  2. Microscopic Defects and Infrared Absorption in Cadmium Telluride, T.J. Magee, J. Peng and J.C. Bean, Phys. Stat. Solidi (a) 27, 557 (1975)

  3. Ion Implantation of As in CdTe: Electrical Characterization and Radiation Damage, J.C. Bean, J.F. Gibbons, T.J. Magee and J.Peng, p. 229, Ion Implantation in Semiconductors, S. Namba Ed., Plenum Press, New York (1975)

  4. Ion Implantation in Cadmium Telluride, J.C. Bean, Ph.D. Thesis, Stanford Electronics Laboratory (1975)

  5. Dependence of Residual Damage on Temperature During Ar Sputter Cleaning of Silicon, J.C. Bean, G.E. Becker, P.M. Petroff and T.E. Seidel, J. Appl. Phys. 48, 907 (1977)

  6. Acceptor Dopants in Silicon Molecular Beam Epitaxy, G.E. Becker and J.C. Bean, J. Appl. Phys. 48, 3395 (1977)

  7. Arbitrary Doping Profiles Produced by Sb-Doped Si-MBE, J.C. Bean, Appl. Phys. Lett. 33, 654 (1978)

  8. Epitaxial Laser Crystallization of Thin Film Amorphous Silicon, J.C. Bean, H.J. Leamy, J.M. Poate, G.A. Rozgonyi, T.T. Sheng, J.S. Williams and G.K. Celler, Appl. Phys. Lett 33, 227 (1978)

  9. Substrate and Doping Effects upon Laser Induced Epitaxy of Amorphous Silicon, J.C. Bean, H.J. Leamy, J.M. Poate, G.A. Rozgonyi, J.P. van der Ziel, J.S. Williams and G.K. Celler, J. Appl. Phys. 50, 881 (1979)

  10. Liquid and Solid Phase Regrowth of Si by Laser Irradiation and Thermally Assisted Flash Annealing, J.M. Poate, J.C. Bean, W.L. Brown, R.L. Cohen, L.C. Feldman, H.J. Leamy , J.W. Rogers, D. Rousseau, G.A. Rozgonyi, J.A. Shelnutt, T.T. Sheng, K.W. West and J.S. Williams, Radiation Effects 48, 167 (1980)

  11. Nonequilibrium Incorporation of Impurities During Rapid Solidification, H.J. Leamy, J.C. Bean, J.M. Poate and G.K. Celler, J. Cryst. Growth 48, 379 (1980)

  12. Laser Induced Epitaxy of Amorphous Silicon, J.C. Bean, H.J. Leamy, J.M. Poate, G.A. Rozgonyi, J.P. van der Ziel, J. S. Williams and G.K. Celler, p. 487, Laser Solid Interactions and Laser Processing 1978, Amer. Inst. Phys. Conf. Proc. 50 (1979)

  13. Luminescent P-GaAs Grown by Zinc Ion Doped MBE, J.C. Bean and R. Dingle, Appl. Phys. Lett. 35, 925 (1979)

  14. Observation of Electron and Hole Traps in a-Si:H by Voltage and Laser Excited DLTS, J.D. Cohen, D.V. Lang, J.P. Harbison and J.C. Bean, Solar Cells 2, 331 (1980)

  15. Evidence for Void Interconnection in Evaporated Amorphous Silicon from Epitaxial Crystallization Measurements, J.C. Bean and J.M. Poate, Appl. Phys. Lett. 36, 59 (1980)

  16. Growth of Thin Silicon Films on Sapphire and Spinel by Molecular Beam Epitaxy, J.C. Bean, Appl. Phys. Lett. 36, 741 (1980)

  17. Effect of Structure and Impurities on the Epitaxial Regrowth of Amorphous Silicon, G. Foti, J.C. Bean, J.C. Poate and C.W. Magee, Appl. Phys. Lett. 36, 840 (1980)

  18. A DLTS Study of the Gap States of Amorphous Si(1-x)H(x) Alloys, J.D. Cohen, D.V. Lang, J.C. Bean and J.P. Harbison, J. Non-Cryst. Sol. 35/36, 581 (1980)

  19. Growth of Doped Silicon Layers by Molecular Beam Epitaxy, J.C. Bean, Chap. 4, Impurity Doping Processes in Silicon, F.F.Y. Wang Ed., North Holland (1981)

  20. Silicon/Metal-Silicide Heterostructures Grown by Molecular Beam Epitaxy, J.C. Bean and J.M. Poate, Appl. Phys. Lett. 37, 643 (1980)

  21. Picosecond Opto-Electronic Detection, Sampling and Correlation Measurements in Amorphous Semiconductors, D.H. Auston, A.M. Johnson, P.R. Smith and J.C. Bean, Appl. Phys. Lett. 37, 371 (1980)

  22. Observation of Gas Absorption in Evaporated Amorphous Silicon Films Using Secondary Ion Mass Spectroscopy, C.W. Magee, J.C. Bean, G. Foti and J.M. Poate, Thin Solid Films 81, 1 (1981)

  23. Epitaxy of Deposited Silicon, J.M. Poate and J.C. Bean, Chap. 8. Laser and Electron Beam Processing of Semiconductor Structures , J.M. Poate and J. W. Mayer Eds., Academic Press (1982)

  24. Picosecond Photoconductivity in Amorphous Silicon, A.M. Johnson, D.H. Auston, P.R. Smith, J.C Bean, J.M. Harbison and D. Kaplan, pp. 285-9, Picosecond Phenomena II, R. Hochstrasser, R. Kaiser and C.V. Shank eds. Springer-Verlag (1980)

  25. Silicon Molecular Beam Epitaxy, J.C. Bean, Invited Review, J. Vac. Sci. Technol. 18, 769 (1981)

  26. Recent Advances in Picosecond Optoelectronics, D.H. Auston, P.R. Smith, A.M. Johnson, W.M. Augustiniak, J.C. Bean and D.B. Fraser, Picosecond Phenomena II, R. M. Hochstrasser, W. Kaiser, and C.V. Shank Eds., Springer-Verlag (1980)

  27. Picosecond Transient Photocurrents in Amorphous Silicon, A.M. Johnson, D.H. Auston, P.R. Smith, J.C. Bean, J.P. Harbison and A.C . Adams, Phys. Rev. B23, 6816 (1981)

  28. Picosecond Time-Resolved Photoconductivity in Amorphous Silicon, A.M. Johnson, D.H. Auston, P.R. Smith, and J.C. Bean, p. 248, Tetrahedrally Bonded Amorphous Semiconductors, Amer. Inst. of Physics Conf. Proc. 73 , 248-52 (1981)

  29. Analysis of CoSi(2)-Si Heterostructures and Interfaces, J.M. Gibson, J.C. Bean, J.M. Poate and R. Tung,, p. 415, Proc. Conf. on Microscopy of Semiconducting Materials, Oxford, Inst. of Physics Conf. Ser. 60, Sec. 8 (1981)

  30. Growth of Single Crystal CoSi(2) on Si(111), R.T. Tung, J.C. Bean, J.M. Gibson, J.M. Poate and D.C. Jacobson, Appl. Phys. Lett. 40, 684 (1982)

  31. Silicon MBE Apparatus for Uniform High-Rate Deposition on Standard Format Wafers, J.C. Bean and E.A. Sadowski, J. Vac. Sci. Technol. 20, 137 (1982)

  32. Silicon Molecular Beam Epitaxy as a VLSI Processing Technique, J.C. Bean, Invited Plenary Lecture, 1981 International Electron Device Meeting, IEDM Technical Digest, p.6 (1981)

  33. Effects of Nucleation and Growth on Epitaxy in the CoSi(2)/Si System, J.M. Gibson, J.C. Bean, J.M. Poate and R.T. Tung, Thin Solid Films 93, 99 (1982)

  34. Epitaxial Silicides, R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson and D.C. Jacobson, Thin Solid Films 93, 77 (1982)

  35. Patterned Silicon Molecular Beam Epitaxy with Submicron Lateral Resolution, J.C. Bean and G.A. Rozgonyi, Appl. Phys. Lett. 41, 752 (1982)

  36. Silicon Molecular Beam Epitaxy: A Comprehensive Bibliography 1962-82, J.C. Bean and S.R. McAfee, Invited Review, Journal de Physique, Colloquium C5, No. 12, p. C5-153 (1982)

  37. Recent Developments in Silicon Molecular Beam Epitaxy, J.C. Bean, Invited Review, J. Vac. Sci. Technol. A1, 540 (1983)

  38. Direct Determination of Atomic Structure at the Epitaxial Cobalt Disilicide on (111) Si Interface by Ultrahigh Resolution Microscopy, J.M. Gibson, J.C. Bean, J.M. Poate and R.T. Tung, Appl. Phys. Lett. 41, 818 (1982)

  39. Raman Spectrographic Analysis of the CaF(2)-Si Heterostructure Interface, M.B. Stern, T.R. Harrison, V.D. Archer, P.F. Liao and J.C. Bean, Solid State Communications 51, 221 (1984)

  40. Observation of a (5x5) LEED Pattern from Ge(x)Si(1-x)(111) Alloys, H.J. Gossmann, J.C. Bean, L.C. Feldman and W.M. Gibson, Surface Science 138, L175 (1980)

  41. Space Charge Behavior of Thin-MOS Diodes with MBE-Grown Silicon Films, U. Lieneweg and J.C. Bean, Solid State Electronics 27, 867 (1984)

  42. Pseudomorphic Growth of Ge(x)Si(1-x) on Si by Molecular Beam Epitaxy, J.C. Bean, T.T. Sheng, L.C. Feldman, A.T. Fiory and R.T. Lynch, Appl. Phys. Lett. 44, 102 (1984)

  43. Commensurate and Incommensurate Structures in Molecular Beam Epitaxially Grown Ge(x)Si(1-x) Films on Si(100), A.T. Fiory, J.C. Bean, L.C. Feldman and I.K. Robinson, J. Appl. Phys. 56, 1227 (1984)

  44. New Infrared Detector on a Silicon Chip, S. Luryi, A. Kastalsky and J.C. Bean, IEEE Trans. on Electron Devices ED-31, 1135 (1984)

  45. Ge(x)Si(1-x)/Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara and I.K. Robinson, J. Vac Sci. Technol. A2, 436 (1984)

  46. Tetragonal Strain in Ge(x)Si(1-x) Films Grown on (100) Si Observed by Ion Channeling and X-ray Diffraction, A.T. Fiory, L.C. Feldman, J.C. Bean and I.K. Robinson, p. 497, "Thin Films and Interfaces II", J.E.E. Baglin, D.R. Cambell and W.K. Chu Eds., Vol. 25, Mat. Res. Soc., North Holland , Amsterdam (1984)

  47. A Raman Scattering Study of Ge(x)Si(1-x)/Si Strained-Layer Superlattices, F. Cerdeira, A. Pinczuk, J.C. Bean, B. Batlogg and B.A. Wilson, J. Vac. Sci. Technol. B3, 600 (1985)

  48. The Structure of Ge(x)Si(1-x)/Si(100) Interfaces and Superlattices, R. Hull, A.T. Fiory, J.C. Bean, J.M. Gibson, L. Scott, J.L. Benton and S. Nakahara, p. 505, Proc. 13th Int. Conf. on Defects in Semiconductors, AIME Conf. Proc. (1984)

  49. Raman Scattering from Ge(x)Si(1-x)/Si Strained Layer Superlattices, F. Cerdeira, A. Pinczuk, J.C. Bean, B. Batlogg and B.A. Wilson, Appl. Phys. Lett. 45, 1138 (1984)

  50. Observation and Properties of Ge(111)-(7x7) Surface from Si(111)/Ge Structures, H.J. Gossmann, J.C. Bean, L.C. Feldman, E.G. McRae and I.K. Robinson, J. Vac. Sci. Technol. A3, 1633 (1985)

  51. Silicon MBE: From Strained-Layer Epitaxy to Device Application, J.C. Bean, Invited Review, J. Cryst Growth 70, 444 (1984)

  52. Molecular Beam Epitaxy of Ge(x)Si(1-x)/(Si,Ge) Strained-Layer Heterostructures and Superlattices, J.C. Bean, p. 245, Invited Review, Layered Structures, Epitaxy and Interfaces, J.M. Gibson and L.R. Dawson Eds., Vol. 37, Materials Research Society, Pittsburgh (1985)

  53. The Application of Silicon Molecular Beam Epitaxy to VLSI, J.C. Bean, Invited Review, p.198, The Physics of VLSI, John C. Knights Ed., AIP Conference Proceedings Number 122, American Institute of Physics, New York (1984)

  54. Observation of Confined Electronic States in Ge(x)Si(1-x)/Si Strained- Layer Superlattices, F. Cerdeira, A. Pinczuk and J.C. Bean, Phys. Rev. B31, 1202 (1985)

  55. Modulation Doping in Ge(x)Si(1-x) Strained Layer Heterostructures, R. People, J.C. Bean, D.V. Lang, A.M. Sergent, H.L. Stormer, K.W. Wecht , R.T. Lynch and K. Baldwin, Appl. Phys. Lett. 45, 1231 (1984)

  56. Modulation Doping in Ge(x)Si(1-x)/Si Strained-Layer Heterostructures: Effects of Alloy Layer Thickness, Doping Setback and Cladding Layer Dopant Concentration, R.People, J.C. Bean and D.V. Lang, J. Vac. Sci. Technol. A3(3), 846 (1985)

  57. Structure Imaging of Commensurate Ge(x)Si(1-x)/Si(100) Interfaces and Superlattices, R. Hull, J.M. Gibson and J.C. Bean, Appl. Phys. Lett. 46, 179 (1985)

  58. Thermal Relaxation of Metastable Strained Layer Ge(x)Si(1-x)/Si Epitaxy, A.T. Fiory, J.C. Bean, R. Hull and S. Nakahara, Phys. Rev. B31, 4063 (1985)

  59. Study of MBE Growth of Ge(x)Si(1-x) on {111} Vicinal Surfaces of Si Substrates, D. Brasen, S. Nakahara and J.C. Bean, J. Appl. Phys. 58, 1860 (1985)

  60. Shape Resonances in OH Groups Chemisorbed on the (100) Surface of Ge-Si Alloys, H.H. Farrel, J.A. Schaefer, J.Q. Broughton and J.C. Bean, pp. 163-9, Structure of Surfaces, M.A. Van Hove and S.Y. Tong Eds., Springer-Verlag, Berlin (1985)

  61. Electronic Excitations of Semiconductor (100) Surfaces, H.H. Farrel, J.Q. Broughton, J.A. Schaeffer and J.C. Bean, p. 63, Proc. 17th Int. Conf. on the Physics of Semiconductors, J.D. Chadi and W.A.Harrison Eds., Springer Verlag, New York (1985)

  62. Interfacial Structure and Stability in Ge(x)Si(1-x)/Si Strained Layers, R. Hull, J.C. Bean, J.M. Gibson, J. Marcantonio, A.T. Fiory and S. Naka hara, p. 261, Layered Structures, Epitaxy and Interfaces, J.M.Gibson and L.R. Dawson Eds., Vol. 37, Mat. Res. Soc., Pittsburgh (1985)

  63. Transmission Electron Microscopy of Strained-Layer Superlattices, J.M. Gibson, M.M. Treacy, R. Hull and J.C. Bean, p. 267, Layered Structures, Epitaxy, and Interfaces, J.M. Gibson and L.R. Dawson Eds., Vol. 37, Materials Research Society, Pittsburgh (1985)

  64. The Chemisorbtion of H20 on Ge(x)Si(1-x)(100)(2x1), H.H. Farrel, J.A. Schaefer, J.Q. Broughton and J.C. Bean, Phys. Rev. B33, 6841 (1986)

  65. Electronic Excitations of Ge(x)Si(1-x)(100)(2x1), H.H. Farrel, J.Q. Broughton, J.A. Schaefer and J.C. Bean, J. Vac. Sci. Technol. A4, 123-6 (1986)

  66. X-Ray Standing Wave Interface Studies of Si<111>, J.R. Patel, J.A. Golovchenko, J.C. Bean, and R.J. Morris, Phys. Rev. B31, 6884-6 (1985)

  67. Elastic Relaxation in Transmission Electron Microscopy of Strained-Layer Superlattices, J.M. Gibson, R. Hull, J.C. Bean and M.M.J. Treacy, Appl. Phys. Lett. 46, 649-51 (1985)

  68. Electroreflectance Spectroscopy of Si/Ge(x)Si(1-x) Quantum Well Structures, T.P. Pearsall, F.H. Pollak, J.C. Bean and R. Hull, Phys. Rev. B33, 6821 (1986)

  69. The Formation and Decomposition of Ge(x)Si(1-x)(100)(2x1):H and Ge(x)Si(1-x)(100)(1x1):2H, J.A. Schaefer, J.Q. Broughton, J.C. Bean and H.H. Farrell, Phys. Rev. B33, 2999-3005 (1986)

  70. Enhancement and Depletion Mode p-Channel Ge(x)Si(1-x) Modulation Doped FET's, T.P. Pearsall and J.C. Bean, IEEE Elec. Dev. Lett. EDL-7, 308-10 (1986)

  71. 7x7 Reconstruction of Ge(111) Surfaces under Compressive Strain, H.J. Gossmann, J.C. Bean, L.C. Feldman, E.G. McRae, and I.K. Robinson, Phys. Rev. Lett. 55, 1106-9 (1985)

  72. Strained Layer Epitaxy of Germanium-Silicon Alloys, J.C. Bean, Invited Review, Science Magazine 230, 127-131 (1985)

  73. Structural Studies of GeSi/Si Heterostructures, R. Hull , J.C. Bean, A.T. Fiory, J.M. Gibson and N.E. Hartsough, pp. 378-386, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  74. Microstructural Studies of Sputter-Cleaned Silicon-Silicon Interfaces Grown by Molecular Beam Epitaxy, R. Hull , J.C. Bean, J.M. Gibson , D.C. Joy and M.E. Twigg, pp. 27-34, Proc. 1st Int. Symp. on Si MBE, J.C. Bean Ed., Electrochemical Society (1985)

  75. Strained-Layer Epitaxy of Ge(x)Si(1-x/(Ge,Si): Heterojunction Technology with Silicon-Based Materials, J.C. Bean, pp. 339-338, Invited Review, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  76. Temperature Dependence of Hole Mobilities in Selectively Doped Ge(x)Si(1-x)/Si Strained-Layer Heterostructures, R. People, J.C. Bean and D.V. Lang, pp. 362-368, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  77. Bragg Diffraction by Amorphous Silicon, A. Ourmazd, J.C. Bean, J.C. Phillips and B.A. Wilson, Nature 325, 121-125 (1987)

  78. Germanium Diffusion and Strain Relaxation in Thermally Annealed Ge- Si/Si(100) Multilayers, A.T. Fiory, J.C. Bean, R. Hull and R.T. Lynch, pp. 385-401, Proc.1st Int. Symp. on Si MBE, J.C. Bean Ed., Electrochemical Society (1985)

  79. Ge(x)Si(1-x) Modulation Doped P-Channel Field Effect Transistors, T.P. Pearsall, J.C. Bean, R. People, and A.T. Fiory, pp. 402-407, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  80. Single-Crystal Ge/Si Infrared Photodetector for Fiber-Optics Communications, A. Kastalsky, S. Luryi, J.C. Bean, and T.T. Sheng, pp. 408-413, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  81. Apparatus for Simultaneous Molecular Beam Epitaxy on Multiple Silicon Substrates, J.C. Bean, and P. Butcher, pp. 429-437, Proc. 1st Int. Symp. on Si MBE, Electrochemical Society (1985)

  82. Observation of Order-Disorder Transitions in Strained Semiconductor Systems, A. Ourmazd, and J.C. Bean, Phys. Rev. B55, 765-8 (1985)

  83. Calculation of Critical Layer Thickness versus Lattice Mismatch for Ge(x)Si(1-x)/Si Strained-Layer Heterostructures, R. People, J.C. Bean, Appl. Phys. Lett. 47, 322-4 (1985)

  84. Stability of Semiconductor Strained-Layer Superlattices, R. Hull, J.C. Bean, F. Cerdeira, A.T. Fiory and J.M. Gibson, Appl. Phys. Lett. 48, 56-8 (1986)

  85. Convergent Beam Electron Diffraction and Imaging of Strained Layer Super lattices, D.M. Maher, H.L. Fraser, C.J. Humphreys, R.V Knoell, R.D. Field, J.B. Woodhouse and J.C. Bean, pp. 49-52, Proc. EMAG '85, Inst. of Physics Conf. Ser. No. 78, Chap 2 (1985)

  86. Heavy Phosphourus Implantation of Ge(0.83)Si(0.17) Epitaxial Layers, J.C. Bean, A.T. Fiory, and L.C. Hopkins , p. 103, Ion Beam Processes in Advanced Electronic Materials and Device Technology, B.R. Appleton, F.H. Eisen and T.W. Sigmon Eds, Vol. 45, Mat. Res. Soc., Pittsburgh PA (1985)

  87. Lattice Relaxation in Thin Compositionally Modulated Semiconductor Films, J.M. Gibson, M.M.J. Treacy J.C. Bean, and R. Hull, p. 277-81, Microscopy of Semiconducting Materials, A.G. Cullis and D.B. Hold Eds., Inst. of Physics Conf. Ser. 76, Hilger Ltd., Bristol and Boston (1985)

  88. Measurement of the Bandgap of Ge(x)Si(1-x)/Si Strained-Layer Heterostructures, D.V. Lang, R. People, J.C. Bean and A.M. Sergent, Appl. Phys. Lett. 47, 1333 (1985)

  89. Enhanced Diffusion in Boron Implanted Silicon, L.C. Hopkins, T.E. Seidel, J.S. Williams, and J.C. Bean, J. Electrochemical Society 132, 2035-6 (1985)

  90. Submicrocrystallites and the Orientational Proximity Effect, A. Ourmazd, J.C. Bean, and J.C. Phillips, Phys. Rev. Lett. 55, 1599 (1985)

  91. Trapping of Oxygen at Homoepitaxial Si-Si Interfaces, R. Hull, J.C. Bean, D.C. Joy and M.E. Twigg, Appl. Phys. Lett. 49, 1287 (1986)

  92. Ge(x)Si(1-x) Strained Layer Superlattice Waveguide Photodetectors Operating Near 1.3 Microns, H. Temkin, T.P. Pearsall, J.C. Bean, R.A. Logan and S. Luryi, Appl. Phys. Lett. 48, 963 (1986)

  93. The Detection of Local Strains in Strained Layer Superlattices, H.L. Fraser, D.M. Maher, C.J. Humphreys, C.J.D. Hetherton, R.V. Knoell and J.C. Bean, p. 307, Proc. Conf. on Microscopy of Semicond. Mater., Inst. of Phys. Conf. Ser 76, Section 7, 307-12, Adam Hilger Ltd. (1985)

  94. Band Alignments of Coherently Strained Ge(x)Si(1-x)/Si Heterostructures on <001> Ge(y)Si(1-y), R. People and J.C. Bean, Appl. Phys. Lett. 48, 538 (1986)

  95. Avalanche Gain in Ge(x)Si(1-x)/Si Infrared Waveguide Detectors, T.P. Pearsall, H. Temkin, J.C. Bean and S. Luryi, IEEE Elec. Dev. Lett. EDL-7, 330-2 (1986)

  96. Waveguide Infrared Photodetectors on a Silicon Chip, S. Luryi, T.P. Pearsall, H. Temkin and J.C. Bean, Elec. Dev. Lett. EDL-7, 104-7 (1986)

  97. The Formation and Decomposition of Water and Hydrogen on Ge(x)Si(1-x)(2x 1), J.A. Schaefer, J.Q. Broughton, J.C. Bean and H.H. Farrell, J. of Electron Spectroscopy and Related Phenomena 39, 127 (1986)

  98. Formation of Stacking Fault Tetrahedra During Epitaxial Growth of Silicon and Germanium-Silicon Layers on {111} Silicon Substrates, D. Brasen, S. Nakahara and J.C. Bean, p. 273, Thin Films: Interfaces and Phenomena, R.J. Nemanich, P.S. Ho and S.S. Lau Eds, Mat. Res. Soc. Proc. Vol. 54, 2738 (1986), Pittsburgh PA (1986)

  99. Preservation of a 7x7 Periodicity at a Buried Amorphous Si/Si (111) Interface, J.M. Gibson, H.-J. Gossmann, J.C. Bean and R.T. Tung, Phys. Rev. Lett. 56, 355 (1986)

  100. High Photoconductive Gain in Ge(x)Si(1-x)/Si Strained Layer Superlattice Detectors Operating at Lambda=1.3 Microns, H. Temkin, J.C. Bean, T.P. Pearsall, N.A. Olsson and D.V. Lang, Appl. Phys. Lett. 49, 155-7 (1986)

  101. Measurement of the Bandgap of GeSi/Si Strained Layer Heterostructures, D.V. Lang, R. People and J.C. Bean, p. 359, Layered Structures and Epitaxy, J.M. Gibson, G.C. Osbourn and R .M. Tromp Eds., Vol. 56, Mat. Res. Soc., Pittsburgh , PA (1986)

  102. Power Loss by Two Dimensional Holes in Coherently Strained Ge(.20)Si(.80)/Si Heterostructures: Evidence for Weak Screening, Y.H. Xie, R. People, J.C. Bean and K.W. Wecht, Appl. Phys. Lett. 49, 283-5 (1986)

  103. Order Disorder Transitions in Strained Semiconductor Systems, A. Ourmazd and J.C. Bean, p. 377, Layered Structures and Epitaxy, J.M. Gibson, G.C. Osbourn and R .M. Tromp Eds., Vol. 56, Mat. Res. Soc, Pittsburgh , PA (1986)

  104. Surface Studies of Silicon with a High Resolution Transmission Electron Microscope, J.M. Gibson, M.L. McDonald, F.C. Unterwald, H.-J. Gossmann, J.C. Bean and R.T. Tung, p. 39, Layered Structures and Epitaxy, J.M. Gibson, G.C. Osbourn and R.M. Tromp Eds., Vol. 56, Mat. Res. Soc., Pittsburgh PA (1986)

  105. Low Threshold Optically Pumped Room Temperature Laser Oscillation at 0.88 um form AlGaAs/GaAs Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition on Ge Coated Si Substrates, J.P. Van der Ziel, R.D. Dupuis and J.C. Bean, Appl. Phys. Lett. 48, 1713-5 (1986)

  106. Ge(.60)Si(.40) Rib Waveguide Avalanche Photodetectors for 1.3 um Operation, H. Temkin, A. Antreasyan, N.A. Olsson, T.P. Pearsall and J.C. Bean, Appl. Phys. Lett. 49, 809-11 (1986)

  107. Trapping of Oxygen at Homoepitaxial Si-Si Interfaces, R. Hull, M.E. Twigg, J.C. Bean and J.M. Gibson, p. 317, Proc. 1985 Boston Meeting of the Mat. Res. Soc. Proc. Vol.59, pp. 317-22 (1985)

  108. Silicon Based Semiconductor Heterostructures, J.C. Bean, Chapter 11 in Silicon Molecular Beam Epitaxy, Vol II, E. Kasper and J.C . Bean Eds., CRC Press (1988)

  109. 1.3 um Avalanche Photodiodes Formed by Waveguiding in Ge(x)Si(1-x) Strained Layer Superlattice, H. Temkin, N.A. Olsson, T.P. Pearsall and J.C. Bean, Proc. Optical Fiber Communications Conf., Atlanta, GA (1986)

  110. 1.3 micron Operation of Ge(x)Si(1-x) Strained-Layer Superlattice Avalanche Photodetectors, International Electron Devices Meeting, Technical Digest, pp. 759-60, IEEE (1985)

  111. A Bibliography of Silicon Molecular Beam Epitaxy, J.C. Bean and R.A. Matula, Chapter 15 in Silicon Molecular Beam Epitaxy, Vol II, E. Kasper and J.C . Bean Eds., CRC Press (1988)

  112. Recent Developments in the Strained Layer Epitaxy of Germanium-Silicon Alloys, J.C. Bean, Invited Review, J. Vac. Sci. Technol. B4, 1427-9 (1986)

  113. The Growth of Novel Silicon Materials, J.C. Bean, Invited Review, Special Issue on "Science and VLSI", J.A. Armstrong Ed., p.36, Physics Today, October 1986
  114. Reprinted in Parity 2(7), pp. 12-23 (1987) - Japan

    Reprinted in Wuli 16(6), pp. 383-4 (1987) - China

  115. X-ray Characterization of Heteroepitaxial Structures with Large Lattice Mismatches, A.T. Macrander, R.D. Dupuis, J.C. Bean and J.M. Brown, pp. 75-85, Proc. Northeast Reg. Mtg. Metallurgical Soc., M.L.Green et. al. Eds., Murray Hill N.J. , May (1986)

  116. Growth and Characterization of GaAs Films Deposited on Ge/Si Composite Substrates by Metalorganic Vapor Deposition, R.D. Dupuis, J.C. Bean, J.M. Brown and A.T. Macrander, R.C. Miller, and L.C. Hopkins, pp. 69-77, J. Electron. Mat. 16(1) (1987)

  117. Silicon Molecular Beam Epitaxy: 1984-1986, J.C. Bean, Invited Review, J. Cryst. Growth 81, 411-420 (1987)

  118. A Prototype Batch Processing MBE Apparatus, J.C. Bean, Chapter 14 in Silicon Molecular Beam Epitaxy, Vol II, E. Kasper and J.C. Bean Eds. (1988)

  119. The Device Application of Silicon Molecular Beam Epitaxy, J.C. Bean, Invited Review, pp. 11-18, Solid State Devices 1986, Inst. of Physics Conference Series Number 82, Institute of Physics , Bristol and Boston (1987)

  120. Automatic Process Control for Artificially Layered Structures, C.A. Gogol, R.A. Deutschman and J.C. Bean, pp. 2077-80, J. Vac. Sci. Technol. A5 (1987)

  121. Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices, T.P. Pearsall, J. Bevk, J.C. Bean, J.M. Bonar and J.P. Mannaerts, p. 287-92, in “Heteroepitaxy on Silicon II,” J.C.C. Fan, J.M. Phillips and B.-Y. Tsaur Eds., Mat. Res. Soc., Pittsburgh PA (1987)

  122. Detection and Measurement of Local Distortions in a Semiconductor Layered Structure by Convergent-Beam Electron Diffraction, D.M. Maher, H.L. Fraser, C.J. Humphreys, R.V. Knoell and J.C. Bean, Appl. Phys. Lett. 50, 574-6 (1987)

  123. Evidence for a Piezoelectric Effect in Strained GeSi Alloys, Y.H. Xie, R. People, J.C. Bean and K. Wecht, J. Vac. Sci. Technol. B5, 744 (1987)

  124. Substrate Orientation Effects on Band Alignments for Pseudomorphic GeSi Alloys on Silicon, R. People, D.V. Lang and J.C. Bean, p. 767, Proc. 18th Int. Conf. on the Physics of Semiconductors, Stockholm (1986), World Scientific Press, Singapore (1987)

  125. Bridging the Gap between Solid-Solid and Solid-Vacuum Interfaces: A Study of Buried Si/a-Si Interfaces, H.J. Gossmann, J.M. Gibson, J.C. Bean, R.T. Tung and L.C. Feldman, J. Vac. Sci. Technol. A5, 1509 (1987)

  126. Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO(2) with (31)P Implantation, C.S. Pai, J.C. Bean, M. Cerullo, K.T. Short and A.E. White, Mat. Res. Soc. Symp. Proc. Vol. 107, pp 507-512 (1988)

  127. Ge(x)Si(1-x) Heterostructures: Physics and Device Applications, J.C. Bean, Invited Review, pp. 269-76, Heteroepitaxy on Silicon, J.C.C. Fan, J.M. Phillips and B.Y. Tsaur Eds., Mat. Res. Soc. Proc. Vol. 91, 269-75 (1987)

  128. Origin of the Optical Transitions in Ordered GeSi(001) Superlattices, M.S. Hybertsen, M. Schluter, R. People , S.A. Jackson , D.V. Lang, T.P. Pearsall, J.C. Bean, Y. Vandenberg and Y. Bevk, Phys. Rev. B37(17), pp. 10 195-8 (1988)

  129. Order-Disorder Transitions in Strained Semiconductor Systems, A. Ourmazd and J.C. Bean, p. 2, Advanced Processing and Characterization of Semiconductors III, SPIE Vol. 623 (1986)

  130. Kinematical Simulation of High-Resolution X-ray Diffraction Curves of Ge(x)Si(1-x)/Si Strain Layer superlattices: A structural Assessment, J.M. Vandenberg, J.C. Bean, R.A. Hamm and R. Hull, Appl. Phys. Lett. 52(14), pp. 1152-4 (1988)

  131. Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si, R. Hull, J.C. Bean, R. Leibenguth, S.M. Koch and J.S. Harris, pp. 293-300, Silicon Molecular Beam Epitaxy, J.C. Bean and L.J. Schowalter Eds, Electrochemical Soc. Proc. Vol. 88-8 (1988)

  132. In-Situ Observation of Misfit Dislocation Propagation in Ge(x)Si(1-x)/Si(100) Heterostructures, R. Hull, J.C. Bean, D.J. Werder and R. Leibenguth, Appl. Phys. Lett. 52, pp. 1605-7 (1988)

  133. Dual Ion Implantation System for Bipolar Doping of Silicon Molecular Beam Epitaxy, J.C. Bean, M. Cerullo and R. Leibenguth, 574-581, Silicon Molecular Beam Epitaxy, J.C. Bean and L.J. Schowalter Eds., Electrochemical Soc. Proc. Vol. 88-8 (1988)

  134. A Prototype Multi-Wafer Silicon Molecular Beam Epitaxy System: Lessons Learned (Part I), J.C. Bean and R. Leibenguth, pp. 603-615, Silicon Molecular Beam Epitaxy, J.C. Bean and L.J. Schowalter Eds., Electrochemical Soc. Proc. Vol. 88-8 (1988)

  135. Ge-Si/Si Infra-Red, Zone-Folded Superlattice Detectors, T.P. Pearsall, E.A. Beam, H. Temkin and J.C. Bean, Electronics Letters 24, pp. 685-6 (1988)

  136. Ge(x)Si(1-x) Strained Layer Heterojunction Bipolar Transistors, H.Temkin, J.C. Bean, A. Antreasyan and R. Leibenguth, Appl. Phys. Lett. 52(13), pp. 1089-91 (1988)

  137. Heteroepitaxy Strains and Interface Structure of Ge-Si Alloy Layers on Si(100), E.P. Kvam, D.J. Eaglesham, C.J. Humphreys, D.M. Maher and J.C. Bean, p.165, Microscopy of Semiconducting Materials 1987, A.G. Cullis and P.D. Augustus Eds., Inst. Phys. Conf. Ser. 87, IOP Publishing Ltd., Bristol (1987)

  138. Compositional Modulations in Ge(x)Si(1-x) Heteroepitaxial Layers, H.L. Fraser, D.M. Maher, R.V. Knoell, D.J. Eaglesham, C.J. Humphreys and J.C. Bean, J. Vac. Sci. Technol B, pp. 210-213 (1989)

  139. Electronic Structure of Ge/Si Monolayer Strained Layer Superlattices, T.P. Pearsall, J. Bevk, J.C. Bean, J.M. Bonar, J.P. Mannaerts and A. Ourmazd, Phys. Rev. B39, 3741 (1989)

  140. New Photoluminescence Defect at 1.0192 eV in Silicon Molecular Beam Epitaxy layers Ascribed to Cu, R. Sauer, M. Asom, R. People, D.V. Lang, L.C. Kimmerling and J.C. Bean, Appl. Phys. Lett. 51, pp. 1185-7 (1987)

  141. Heteronucleation onto Silicon Surfaces, R. Hull, J.C. Bean, N. Chand , R.E. Leibenguth, D. Bahnck, S.M. Koch and J.S. Harris, Mat. Res. Soc. Symp. Proc. Vol. 102, pp. 455-60 (1988)

  142. Tetragonal and Monoclinic Forms of Ge(x)Si(1-x) Epitaxial Layers, D.J. Eaglesham, D.M. Maher, C.J. Humphreys, H.L. Fraser and J.C. Bean, Appl. Phys. Lett. 54, pp. 222-4 (1989)

  143. The Nucleation and Propagation of Misfit Dislocations Near the Critical Thickness in Ge-Si Strained Epilayers, E.P. Kvam, D.J. Eaglesham, D.M. Maher, C.J. Humphreys, J.C. Bean, G.S. Green and B.K. Tanner, Proc. Symp. on Defects in Electronic Materials, Mat. Res. Soc. Symp. Proc. Vol. 104, pp 623-8 (1988)

  144. Activation Barriers to Strain Relaxation in Lattice-Mismatched Epitaxy, R. Hull, J.C. Bean, D.J. Werder and R.E. Leibenguth, Phys. Rev. B40(3), pp. 1681-4 (1989)

  145. Role of Strained Layer Superlattices in Misfit Dislocation Reduction in Growth of Epitaxial Ge(0.5)Si(0.5) Alloys on Si(100) Substrates, R. Hull, J.C. Bean, R.E. Leibenguth and D.J. Werder, J. Appl. Phys. 65(12), pp. 4723-4729 (1988)

  146. Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices, R.Hull, J.C. Bean and R.E. Leibenguth, MRS Symposium on Heteroepitaxy on Silicon, Proc. Vol. 116, pp. 505-512 (1988)

  147. Technological Prospects for Germanium Silicide Epitaxy, J.C. Bean, Invited Review, Mat. Res. Soc. Proc. Vol. 116, pp 479-89 (1988)

  148. Dislocation Nucleation Near the Critical Thickness in GeSi/Si Strained Layers, D.J. Eaglesham, E.P. Kvam, D.M. Maher, C.J. Humphreys and J.C. Bean, Phil. Mag. A, 59(5), pp. 1059-73 (1989)

  149. Nucleation of Misfit Dislocations in Strained Layer Epitaxy in the Ge(x)Si(1-x) System, R. Hull and J.C. Bean, J. Vac. Sci. Technol. A7(4), pp. 2580-85 (1989)

  150. X-ray Topography of the Coherency Breakdown in GeSi/Si(100), D.J. Eaglesham, E.P. Kvam, D.M. Maher, C.J. Humphreys, G.S. Green, B.K. Tanner and J.C. Bean, Appl. Phys. Lett. 53, pp. 2083-5 (1988)

  151. Heteronucleation and Growth on Si Surfaces by Molecular Beam Epitaxy, R. Hull, J.C. Bean, S.M. Koch and J.S. Harris Jr., Proc AIME/TMS Symp. on Interfaces and Dislocations in Semiconductors, p. 77 (1988)

  152. Variation in Misfit Dislocation Behavior as a Function of Strain in the GeSi/Si System, R. Hull and J.C. Bean, Appl. Phys. Lett. 54(10), pp. 925-927 (1989)

  153. Principles and Concepts of Strained Layer Epitaxy, R. Hull and J.C. Bean, Chap. 1, Strained Layer Epitaxy, T.P. Pearsall Ed., Semiconductors and Semimetals Volume 33, Academic Press, New York 1991)

  154. Hydrogenation of Molecular Beam Epitaxial Ge(36)Si(64) on Si, Y.H. Xie, H.S. Luftman, J. Lopata and J.C. Bean, Appl. Phys. Lett. 55, 684-9 (1989)

  155. In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into Ge(x)Si(1-x) Heterostructure, R.Hull, J.C. Bean, J.M. Bonar, and C. Buescher, pp. 381-94, in “Evaluation of Advanced Semiconductor Materials by Electron Microscopy,” D. Cherns Ed., Plenum (1989)

  156. A New Source of Dislocations in Ge(x)Si(1-x) (100), D.J. Eaglesham, D.M. Maher, E.P. Kvam, J.C. Bean and C.J. Humphreys, Phys. Rev. Lett. 62(2), pp. 187-190 (1989)

  157. Optical Properties of Ge-Si Superlattices on 001 Ge, T.P. Pearsall, J.C. Bean, R. Hull, and J.M. Bonar, Proc. 3rd Int. Symp. on Si-MBE, 1989 Mtg. European Mat. Res. Soc., Thin Solid Films 183, pp. 9-16 (1989)

  158. Dislocation Nucleation in GeSi/Si(100) Strained Epilayers, D.J. Eaglesham, E.P. Kvam, D.M. Maher, C.J. Humphreys and J.C. Bean, Mat. Res. Symp. Proc. Vol. 138, pp. 397-402 (1989)

  159. A Phenomenological Description of Strain Relaxation in Ge(x)Si(1-x)/Si(100) Heterostructures, R. Hull, J.C. Bean and C. Buescher, J. Appl. Phys. 66(12), pp. 5837-43 (1989)

  160. Thermal Stability of Si/Ge(x)Si(1-x)/Si Heterostructures, R.Hull, J.C. Bean and K.T. Short, Appl. Phys. Lett. 55, 1900-2 (1989)

  161. Structural Changes Caused by H2 Adsorbtion on Silicon Surfaces, S.H. Wolff and S. Wagner, J.M. Gibson, D. Loretto, I.K. Robinson and J.C. Bean, Surface Science 239, L537 (1990)

  162. From Porous Si to Patterned Si Substrates: Can Misfit Strain Energy in a Continous Heteroepitaxial Film be Reduced?, Y.H. Xie and J.C. Bean, J. Vac. Sci Technol. B8 (2), 227 (1990)

  163. Ion Beam Induced Epitaxial Crystallization of Ge(x)Si(1-x) Structures, R.G. Elliman, M.C. Ridgeway, J.S. Williams and J.C. Bean, Appl. Phys. Lett 55, pp. 843-5 (1989)

  164. Materials and Technologies for High Speed Devices, J.C. Bean, Chap. 1, "High Speed Devices," S.M. Sze Ed., John Wiley & Sons, New York (1990)

  165. Hydrogen Surface Coverage: Raising the Silicon Epitaxial Growth Temperature, S. Wolff, S. Wagner, J.C. Bean, R. Hull and J.M. Gibson, Appl. Phys. Lett. 55, 2017-9 (1989)

  166. Electrical Properties of Si/SiGe Structures Grown by Low Temperature Epitaxy, H. Temkin, M.L. Green, D. Brasen and J.C. Bean, in “Rapid Thermal Annealing / Chemical Vapor Deposition and Integrated Processing,” pp. 65-70, Mat. Res. Soc. (1989)

  167. Experimental and Theoretical Analysis of Strain Relaxation in Ge(x)Si(1-x)/Si(100) Heteroepitaxy, R. Hull , J.C. Bean and D. Bahnck, in “Chemistry and Defects in Semiconductor Heterostructures,” Mat. Res. Soc. Proc. Vol. 148, pp. 309-14 (1989)

  168. Strain Relaxation Phenomena in Ge(x)Si(1-x) Strained Structures, R. Hull, J.C. Bean, D.J. Eaglesham, J.M. Bonar and C. Buescher, Thin Solid Films 183, pp. 117-132 (1989)

  169. Enhanced Strain Relaxation in Si/Ge(x)Si(1-x)/Si Heterostructures via Point Defect Concentrations Introduced by Ion Implantation, R. Hull, J.C. Bean, G. Higashi, H. Temkin, K.T. Short and A.E. White, Appl. Phys. Lett. 56, pp. 2445-7 (1990)

  170. Evidence for a Real Space Transfer of Hot Holes in Strained GeSi Heterostructures, P.M. Mensz, S. Luryi, J.C. Bean and C.J. Buescher, Appl. Phys. Lett. 56, pp. 2663-5, (1990)

  171. Improved Minority Carrier Lifetime in GeSi/Si Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy, G.S. Higashi, J.C. Bean, R. Yadvish and H.Temkin, Appl. Phys. Lett. 56, pp. 2560-2, (1990)

  172. Kinetic Barriers to Strain Relaxation in Ge(x)Si(1-x) Epitaxy, R. Hull and J.C.Bean, Proc. Mat. Res. Soc. 160, 23 (1990)

  173. Silicon Molecular Beam Epitaxy: Highlights of Recent Work, J.C. Bean, Invited Review, J. Elec. Mat. 19, pp.1055-99 (1990)

  174. Heteroepitaxy of Ge(x)Si(1-x) on Porous Si Substrates, Y.H. Xie and J.C. Bean, J. Appl. Phys. 67(2), pp. 792-5 (1990)

  175. Dynamic Observations of Relaxation Processes in Semiconductor Heterostructures, R. Hull and J.C. Bean, Advanced Materials 3, 139-147 (1991)

  176. Silicon Based Heterostructure Devices, J.C. Bean, Invited Review, Proc. Superlattice and Heterostructure Symp., ECS Meeting May 1990

  177. Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy, R. Hull, J.C. Bean, J.M. Bonar and L.J. Peticolas, Semiconductor Heterostructures, Mat. Res. Soc. Proc. Vol. 198, pp. 459-71 (1990)

  178. Current Gain Enhancement in Bipolar Transistors by Low Energy Ion Beam Modification of the Polysilicon Emitter, B. Jalali, C.A. King, G.S. Higashi, J.C. Bean, R. Hull, Y.-F. Hsieh and J.M. Poate, Appl. Phys. Lett. 58, pp. 2009-11 (1991)

  179. Interpretation of Dislocation Propagation Velocities in Strained GeSi/Si(100) Heterostructures by the Diffusive Kink Pair Model, R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck and F. Unterwald. J. App. Phys. 70. 2052 (1991)

  180. Dependence of Misfit Dislocation Velocities Upon Growth Technique and Oxygen Content in Strained Ge xSi 1-x/Si(100) Heterostructures, by R. Hull, J.C. Bean, D. Noble, J. Hoyt and J. F. Gibbons. Appl. Phys. Lett. 59, pp.1585-7 (1991)

  181. Silicon Based Semiconductor Heterostructures: Column IV Bandgap Engineering, J.C. Bean, Invited Review, Proceedings of the IEEE, Vol. 80 (4), pp. 571-87 (1992)

  182. Growth of Ge xSi 1-x Alloys on Si (110) Surfaces, by R. Hull, J. C. Bean, L. J. Peticolas and D. Bahnck. Appl. Phys. Lett. 59, pp. 964-6 (1991)

  183. Dynamic Observations of Misfit Dislocations in Strained Layer Heterostructures, R. Hull, J.C. Bean, J.M. Bonar and L.J. Peticolas, Oxford Meeting on Electron Microscopy, p. 497, 1991

  184. Piezoreflectance of Strained Si-Ge Superlattices Grown on (001) Ge, Y. Yin, D. Yan, F.H. Pollak, M.S. Hybertsen, R. People, S.K. Sputz, J.M. Vandenberg and J.C. Bean, Surface Science 267, 99 (1992)

  185. Improvement in Heteroepitaxial Film Quality by a Novel Substrate Patterning Geometry, R.Hull, J.C. Bean, G. Higashi, M. Green, L.J. Peticolas and D. Bahnck, Appl. Phys. Lett. 60, 1468-70 (1992)

  186. Piezoreflectance Study of Short-Period Strained Si-Ge Superlattices Grown on (001) Ge, Y. Yin, D. Yan, F.H. Pollak, M.S. Hybertsen, J.M. Vandenberg and J.C. Bean, Phys. Rev. B44, pp. 5955-7 (1991)

  187. Growth of Ge xSi 1-x on Si (100), (110) and (111) Surfaces, R. Hull, J.C. Bean, L.J. Peticolas, Y.H. Xie and Y.F. Hsieh, pp. 153-9, Silicon Molecular Beam Epitaxy, Bean et al. Eds., Mat. Res. Soc. Proc. Vol. 220 (Spring 1991)

  188. Misfit Dislocations in Lattice-Mismatched Epitaxial Films, R. Hull and J.C. Bean, Invited Review, Critical Reviews of Materials Science 17(6), 507-546 (1992)

  189. Real-Time X-ray Diffraction Observation of a Pin-Slip Mechanism in Ge xSi 1-x Strained Layers, W. Lowe, R.A. MacHarrie, J.C. Bean, L. Peticolas, R.Clarke, W. Dos Passos, C. Brizard and B. Rodricks, Physical Review Letters 67, pp. 2513-16 (1991)

  190. Broadband (8-14 mm), Normal Incidence, Pseudomorphic Ge xSi 1-x /Si Strained-Layer Infrared Photodetector Operating Between 20-77 K, R. People, J.C. Bean, C.G. Bethea, S.K. Sputz and L.J. Peticolas, Appl. Phys. Lett. 61, 1122-4 (1992)

  191. The Roles of Stress, Geometry and Orientation on Misfit Dislocation Kinetics and Energetics in Epitaxial Strained Layers, R. Hull, J.C. Bean, F. Ross, Y.H. Xie, D. Bahnck and L.J. Peticolas, Mat. Res. Soc. proc. Vol. 239, 379 (1992)

  192. Profile Structures of Macromolecular Monolayers on Solid Substrates by X-ray Interferometry/Holography, J. Kent Blaisie, Sontao Xu, Margaret Murphy, Janine Chupa, John P. McCaulay, Amos B. Smith III, Lawrence J. Peticolas and John C. Bean, Mat. Res. Soc. Proc. 237, 399 (1992)

  193. In Situ Transmission Electron Microscopy Measurements of the Electrical and Structural Properties of Strained layer GeSi/Si P-N Junctions, F.M. Ross, R. Hull, D. Bahnck, J.C. Bean, L.J. Peticolas, R.A. Hamm and H.A. Huggins, J. Vac. Sci. Technol. B10, 2008 (1992)

  194. Profile and In-Plane Structures of Self-Assembled Monolayers on Ge/Si Multilayer Substrates by High Resolution X-ray Interferometry /Holography, S. Xu, R.F. Fischetti, J.K. Blasie. L.J. Peticolas and J.C. Bean, J. Physical Chemistry 97, 1961-9 (1993)

  195. Photoreflectance in Ge/Ge(0.7)Si(0.3) Strained Layer Superlattices, P.A.M. Rodrigues, F. Cerdeira and J.C. Bean, Phys. Rev. B46, 15263 (1992).

  196. A Quantitative Analysis of Strain Relaxation in Ge xSi 1-x / Si(110) Heterostructures and an Accurate Determination of Stacking Fault Energy in Ge xSi 1-x Alloys, R. Hull, J.C. Bean, D. Bahnck, B.E. Weir and L.C. Feldman, Appl. Phys. Lett. 61, 2802 (1992)

  197. Misfit Dislocations in Strained Layer Epitaxy: I. Energetics, R. Hull and J.C. Bean, Scripta Metallurgica et Materialia 27, 657-662 (1992)

  198. Misfit Dislocations in Strained Layer Epitaxy: II. Energetics, Kinetics, J.C. Bean and R. Hull, Scripta Metallurgica et Materialia 27, 663-667 (1992)

  199. Short Period Si-Ge Microstructures Grown on (001) Ge by Modulation Spectroscopy, Y. Yin, F.H. Pollak, M.S. Hybertsen, J.M. Vandenberg and J.C. Bean. to be published in Thin Solid Films

  200. Strain Relief Mechanisms in the Growth of Ge xSi 1-x/Si(110) Heterostructures, R. Hull, J.C. Bean, B. Weir, L.J. Peticolas, D. Bahnck and L.C. Feldman, in “Mechanisms of Heteroepitaxial Growth,” pp. 403-8, Mat. Res. Soc. (1992).

  201. Profile Structures of Macromolecular Monolayers on Solid Substrates by X-ray Iterferometry/Holography, Materials Research Proceedings Volume 237, pp. 399-409 (1992)

  202. Normal Incidence Hole Intersubband Quantum Well Infrared Photodetectors in Pseudomorphic Ge x Si 1-x /Si, R. People, J.C. Bean, S.K. Sputz, C.G. Bethea and L.J. Peticolas, Proceedings Spring 1992 European MRS Mtg., Thin Solid Films 222, 120 (1992)

  203. Changes in Electrical Device Characteristics During the in situ Formation of Dislocations, F.M. Ross, R. Hull, D.E. Bahnck, J.C. Bean, L.J. Peticolas and C.A. King, Appl. Phys. Lett. 62, 1426 (1993)

  204. Pseudomorphic p-Ge x Si 1-x /Si Quantum Well Infrared Photodetectors for Normal Incidence Operation between 20-77K, R. People, J.C. Bean, S.K. Sputz, C.G. Bethea, L.J. Peticolas and G.R. Weber, Proceedings Spring 1992 SPIE Mtg.

  205. Ge 0.2 Si 0.8 /Si Bragg Reflector for Optoelectronic Device Applcations, R. Kuchibhotla, J.C. Campbell, J.C. Bean, L.J. Peticolas and R.Hull, Appl. Phys. Lett. 62, pp. 2215-17 (1993)

  206. Techniques for the Growth of Crystalline Films by Molecular Beam Deposition, J.C. Bean, pp. 87-107 in Multicomponent and Multilayered Thin Films for Advanced Technologies: Techniques, Fundamentals and Devices, O. Auciello and J. Engemann Eds., Series E: Applied Sciences, Vol. 234, Nato ASI Series, Kluwer Academic Press, Dordrecht (1993)

  207. Design and Fabrication of Asymmetric Strained Layer Mirrors for Optoelectronic Applications, J.C. Bean, D.L. Windt, R. Hull, L.J. Peticolas, R. Kuchibhotla and J.C. Campbell, Appl. Phys. Lett. 63, 444-6 (1993)

  208. Changes in Electronic Devices Properties During the Formation of Dislocations, F.M. Ross, R. Hull, D. Bahnck, J.C. Bean, L.J. Peticolas, R.R. Kola and C.A. King, in “Evolution of Surface and Thin Film Microstructure,” pp. 483-92, Mat. Res. Soc. (1993)

  209. New Insights into the Microscopic Motion of Dislocations in Covalently Bonded Semiconductors by In-Situ Transmission Electron Microscope Observations of Misfit Dislocations in Thin Strained Epitaxial Layers, R. Hull and J.C. Bean, Phys. Stat. Sol. 138, 533 (1993)

  210. A Monolayer of C60 Tethered to the Surface of an Inorganic Substrate: Assembly and Structure, J.A. Chupa, S. Xu, R.F. Fischetti, R.M. Strongin, J.P. McCauley, A.B. Smith III, J.K. Blasie , L.J. Peticolas and J.C. Bean, J. Amer. Chem. Soc. 115, 4383-4 (1993)

  211. X-ray Inteferometry/Holography for the Unambiguous Determination of the Profile Structures of Single Langmuir-Blodgett Monolayers, M.A. Murphy, J.K. Blasie, L.J. Peticolas and J.C. Bean, Langmuir 9, 1134-41 (1993)

  212. Misfit Dislocation Microstructures and Kinetics During Growth and Annealing of Lattice Mismatched Semiconductor Heterostructures, R. Hull, J.C. Bean and R.A. Logan, to be published in the proceedings of the Spring 1993 ECS Symposium on Process Physics and Modeling in Semiconductor Technology.

  213. Misfit Dislocations in Strianed Layer Epitaxy, R. Hull, J.C. Bean and R.A. Logan, Solid State Phenom vol. 32-33, 417-32 (1993)

  214. Confinement and Zone-Folding in the E 1-like Optical Transitions of Ge/Si Quantum Wells and Superlattices, P.A.M. Rodrigues, M.A. Araujo Silva, F. Cerdeira and J.C. Bean, Physical Review B48, pp. 18024-30 (1993)

  215. Changes in Electrical Characteristics During the Formation of Dislocations in situ in the TEM, in “Microscopy of Semiconducting Materials 1993”, pp. 245-8, Proceedings of the Royal Microscopical Conference, IOP (1993)

  216. Vectorially Oriented Membrane Protein Monolayers: Profile Structures via X-ray Interferometery/Holography, J.A. Chupa, J.P. McCauley, R.M. Srongin, A.B. Smith, J.K. Blaisie, L.J. Peticolas, and J.C. Bean, Biophysical Journal 67, 336-48 (1994)

  217. High Reflectivity GeSi/Si Asymmetric Bragg-Reflector at 0.8 m, S. Murtaza, J. Campbell, J.C. Bean and L.J. Peticolas, Electronics Letters 30 (4), pp. 315-6 (1994)

  218. Room Temperature Electroabsorption in a Ge(x)Si(1-x) PIN Photodiode, S. Murtaza, R. Mayer, M. Rashed, D. Kinosky, C. Maziar, S. Banerjee, A. Tasch, J. Campbell, J.C. Bean and L.J. Peticolas, IEEE Trans. on Elec. Dev. 41, 2297-2300 (1994)

  219. Epitaxial Si-Ge Etch Stop Layers with EDP for Bonded and Etchback Silicon on Insultaor, D. Feijoo, J.C. Bean, L.J. Peticolas, L.C. Feldman, and W.-C. Liang, J. Electronic Materials 23, 493-6 (1994)

  220. Photoemission Measurement of Equilibrium Segregation at GeSi Surfaces, J.E. Rowe, D.M. Riffe, G.K. Wertheim and J.C. Bean, J. Appl. Phys. 76, 4915-17 (1994)

  221. Microstructural Evolution and Stress Relaxation in Sputtered Tungsten Films, F.M. Ross, R.R. Kola, R. Hull and J.C. Bean, in “Interface Control of Electrical, Chemical and Mechanical Properties”, S.P. Murarka, T. Ohmi, K. Rose and T. Seidel Eds., Mat. Res. Soc. Proc. Vol. 318, pp. 697-702 (1994)

  222. X-ray Diffraction Studies of Annealed GeSi/Si SLS, W.P. Lowe, J.C. Bean and R.A. MacHarrie, pp. 205-9, Thin Films: Stresses and Mechanical Properties, Materials Research Society (1989)

  223. Misfit Dislocation Propagation Kinetics in Ge xSi 1-x/Ge(100) Heterostructures, R. Hull, J.C. Bean, L.J. Peticolas, K. Prabhakaran and T. Ogino, Appl. Phys. Lett. 65, pp. 327-9 (1994)

  224. An Efficient Method for Cleaning of Ge Substrates, K. Prabhakaran, T. Ogino, R. Hull, J.C. Bean and L.J. Peticolas, Surface Science 316, L1031-33 (1994)

  225. In-situ Transmission Electron Microscope Observations of Misfit Dislocations in Lattice-Mismatched Epitaxial Semiconductor Structures, R. Hull, J.C. Bean and F. Ross , Bulletin of the Materials Research Society, Vol. 19(6), June (1994)

  226. Asymmetric Dual GeSi/Si Bragg Mirror and Photodetector Operating at 632nm and 780nm, S.S. Murtaza, J.C. Campbell, J.C. Bean and L.J. Peticolas, Appl. Phys. Lett. 65, 795 (1994)

  227. E1-Like Optical Transitions in Ge/Si Heterostructures Studied by Electroreflectance, P.A.M. Rodrigues, M.A. Araujo Silva, F. Cerdeira and J.C. Bean, Brazilian Journal of Physics 24 (1), pp. 242-7 (1994)

  228. Correlated Interfacial Roughness Anisotropy in Ge xSi 1-x/Si Superlattices, Y.H. Phang, C. Teichert, L. Peticolas, J.C. Bean, E. Kasper and M.G. Lagally, Physical Review, B50(19), 14435-45 (1994)

  229. Direct Observation of the Potential Distribution across Si/Si p-n Junction Using Off-Axis Electron Holography, M.R. McCartney, David J. Smith, Robert Hull, J.C. Bean, E. Voekl and B, Frost, Appl. Phys. Lett. 65, 2603-5 (1994)

  230. Infrared Absorption of Ge Epitaxial Films on a GaAs Substrate, M. Dubey, K.A. Jones, W.Y. Han, L.C. West, C.W. Roberts, J.P. Dunkel, L. Peticolas and J.C. Bean, J.Appl. Phys. Lett. 79, 7157-60 (1996)

  231. High Reflectivity Bragg Mirrors for Optoelectronic Application, S.S. Murtaza, K.A. Anselm, A. Srinivasan, B.G. Streetman, J.C. Campbell, J.C. Bean and L.J. Peticolas, IEEE J. Quantum Electronics 31, 1819-25 (1995)

  232. Novel High-Reflectivity Btagg Mirrors and Rsonant-Cavity Diodes, J.C. Campbell, S.S. Murtaza, K.A. Anselm, A. Srinivasan, B.G. Streetman, J.C. Bean and L.J. Peticolas, J. Korean Physical Society 28, S26-31 (1995)

  233. Localized Strain Characterization in Semiconductor Structures using Electron Diffrction Contrast Imaging, K. Janssens, O. V. der Beist, J. Vanhellemont, H. Maes, R. Hull and J.C. Bean, Materials Science and Technology 11, 66-71 (1994)

  234. Quantum Mechanical Modeling of the Charge Distribution in a Si/SiGe/Si P-Channel MOSFET, M.J. Hargrove, A.K. Henning, J.A. Slinkman and J.C. Bean, International Electron Device Meeting 1994, Technical Digest p. 735-8, IEEE

  235. Theory of Reflectivity in an Asymmetric Mirror, S.S. Murtaza, J.C. Campbell and J.C. Bean, Applied Optics 35, pp. 2054-9 (1996)

  236. Silicon Molecular Beam Epitaxy, J.C. Bean, in “Handbook of Thin Film Process Technology: First Edition”, D. Glocker and S.I. Shad Eds. Institute of Physics Press, ISBN0750308338, 1995

  237. A Structural Study of the Annealing of Alkylsiloxane Self-Assembled Monolayers on Silicon by High Resolution X-ray Diffraction, M.A. Murphy, C.E. Nordgren, R.F. Fischetti, J.K. Blasie, L.J. Peticolas and J.C. Bean, J. Physical Chemistry 99, 14039-51 (1995)

  238. Temperature Dependence of the Fundamental Direct Transitions of the Bulk Ge and Two Ge/GeSi Multiple Quantum Well Structure, Y. Yin, D. Yan, F.H. Pollak, M.S. Hybertsen, J.M. Vandenberg and J.C. Bean, Physical Review B52, 8951-8 (1995)

  239. In-Situ Process Control for Semiconductor Technology: A Contrast Between Research and Factory Perspectives, or Observations of a Researcher Who Has Seen the Light... At Dawn... Driving the Interstate to an Out-of-State Factory, J.C. Bean, Invited Plenary Lecture, 1995 NIST Workshop, Semiconductor Characterization: Present Status and Future Needs, pp. 459-66, W.M. Bullis, D.G. Seiler and A.C. Diebold Eds., AIP Press, Woodbury NY , 1995

  240. Resonant Raman Scattering and Electroreflectnce in Ge(0.5)Si(0.5) Heterostructures, pp. 1540-3, Proc. 22 nd Interantional Conference on the Physics of Semiconductors, World Scientific, Part Vol. 2 (1995)

  241. Resonant Cavity Photodetectors for Optical Communications, S.S. Murtaza, K.A> Anselm, H. Nie, C. Hu, J.C. Campbell, B.G. Streetman, J.C. Bean and L.J. Peticolas, SPIE / Int. Soc. Opt. Eng., Vol. 2613, pp. 98-106 (1995)

  242. Short-Wavelength, High-Speed, Si-Based Resonant Cavity Photodetector, S.S. Murtaza, H. Nie, J.C. Campbell, J.C. Bean and L.J. Peticolas, Appl. Phys. Lett. 8, 927 (1996)

  243. Characterization of Different Length Scales and Periodicities in Ge/Si Microstructures by Raman Spectroscopy: Theory and Experiment, M.A. Araujo Silva, E. Ribeiro, P.A. Schulz, F. Cerdeira and J.C. Bean, J. Raman Spectroscopy 27, pp. 257-63 (1996)

  244. Interfaces, Confinement, and Resonant Raman Scattering in Ge/Si Quantum Wells, O. Brafman, M.A. Araujo, F. Cerdeira, R. Manor and J.C. Bean, Phys. Rev. B51, 17800-5 (1995)

  245. Simple, Equipment Tolerant Reflectometry for Monitoring of MBE and MOCVD Growth, J.C. Bean, L.J. Peticolas, R. L. Lum and M.L. McDonald, J. Vac. Sci. Technol. A, 946-51 (1996)

  246. Vectorially Oriented Monolayers of Detergent-Solubilized Ca2+ - ATPase from Sarcoplasmic Reticulum, L.A. Prokop, R.M. Strongin, A.B. Smith III, J.K. Blasie, L.J. Peticolas and J.C. Bean, Biophysical Journal 70, 2131-43 (1996)

  247. Linear-Chain Model Interpretation of Resonant Raman Scattering in Ge(n)Si(m) Microstructures, M.A. Araujo Silva, E. Ribeiro, P.A. Schulz, F. Cerdeira and J.C. Bean, Phys. Rev. B53, 15871-77 (1996)

  248. Stress-Induced Self-Organization of Nanoscale Structures in SiGe/Si Multilayer Films, C. Teichert, L.J. Peticolas, J.C. Bean, J. Tersoff and M.G. Lagally, Physical Review B 53 (24), 16334-7, 1996

  249. Si/SiO2 Resonant Cavity Photodetector, D.C. Diaz, C.L. Schow, Jieming Qi, J.C. Campbell, J.C. Bean and L.J. Peticolas, Applied Physics Lett. 69 (19), 2798-2800 (1996)

  250. In-situ Reflectance Monitoring of InP/InGaAsP Films Grown by Metalorganic Vapor Phase Epitaxy, R.M. Lum, M.L. McDonald, J.C. Bean, J. Vandenberg, T.L Pernell, S.N.G. Chu, A. Robertson and A. Karp, Appl. Phys. Lett. 69, 928-30 (1996)

  251. Interface Roughness and Periodicities in Ge/Si Microstructure Studies by Experimentally and Numerically Simulated Raman Scattering, F. Cerdeira, e. Ribeiro, M.A. Araujo-Silva, P.A. Schulz and J.C. Bean, pp. 1727-30, Proc. 23 International Conference on the Physics of Semiconductors, World Scientific. Part vol. 3 (1996)

  252. Use of Reflectance Spectroscopy for In-Situ Monitoring of InP/InGaAsP Films Grown by MOCVD, pp. 578-81, Proc. 8 th Interantional Conference on Indium Phosphide and Related Materials (Cat. No. 96CH35930), IEEE (1996)

  253. Tribochemical Reactions of Silicon: An in-situ FTIR Characterization, V.A. Muratov, J.E. Olsen, B.M. Gallois, T.E. Fischer and J.C. Bean, J. Electrochemical Soc. 145 (7), 2465-70 (1998)

  254. High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2/Si Bragg Reflectors, J. C. Bean, Jieming Qi, C. L. Schow, R. Li, H. Nie, J. Schaub, and J. C. Campbell, IEEE Photonics Tech. Lett. 9, pp. 806-8, June (1997)

  255. Extended-Spectral-Range FTIR-ATR Spectroscopy on Si Surfaces Using a Novel Si-Coated Ge ATR Prism, E. Rudkevich, D.E. Savage, W. Cai, J.A. Sullivan, S. Nayak, T. F. Kuech, L. McCaughan, M. G. Lagally, and J.C. Bean, J.Vac. Sci. Technol. A15, 2153 (1997).

  256. On Interfaces and the Phonons and Electrons Confinement in Ge/Si Multiple Quantum Wells, R. Manor, O. Brafman and J.C. Bean, Appl. Surface Science 102, 217-20 (1996)

  257. Vectorially-Oriented Monolayers of Cytochrome Oxidase: Fabrication and Profile Structures, A.M. Edwards, J.A. Chupa, R.M. Strongin, A.B. Smith III, J.K. Blasie and J.C. Bean, Langmuir 13, 1634-43 (1997)

  258. Vectorially-Oriented Monolayers of the Cytochrome c/Cytochrome Oxidase Bimolecular Complex, A.M. Edwards, J. K. Blasie and J.C. Bean, Biophysical Journal 74, 1346-57 (1998)

  259. Evidence for Interface Terraces in Ge/Si Quantum Wells Obtained by Raman Scattering, O. Brafman, R. Manor, M.A.A. Silva, F. Cerdeira and J.C. Bean, Physica B, 219-220, 502-4 (1996)

  260. Resonant-Cavity Photodetectors: Performance and Funtionality, J.C. Campbell, J.C. Bean, D.G. Deppe, D.L. Huffaker and B.G. Streetman, invited paper, Proc. International Device Research Symposium, 603-6 (1997) / Proc. Of SPIE Conf. Optoelectronic Integrated Circuits, Vol. 3290, pp. 34-40 (1997)

  261. Interface Morphology of Ge n/Si Quantum Wells Studied with Raman Spectroscopy and High Resolution X-ray Diffraction, G.A. Narvaez, I.C.L. Torriani, F. Cerdeira and J.C. Bean, Brazilian Journal of Physics 27(4), 632 (1997)

  262. On the Cross-Over between 2D and 3D growth in Si/Ge n/Si Quantum Wells, G.A. Narvaez, I.C.L. Torriani, F. Cerdeira and J.C. Bean, Solid State Communications 107, 359-362 (1998)

  263. Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers, E. Mateeva, P. Sutter, J.C. Bean and M.G. Lagally, Appl. Phys. Lett. 71, 3233 (1997)

  264. Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on vicinal Si (001) Substrates, C. Teichert, Y.H. Phang, L.J. Peticolas, J.C. Bean and M.G. Lagally, Surface Diffusion: Atomistic and Collective Processes, Michael C. Tringides Ed., Plenum Press, New York (1997)

  265. In-situ Studies of the Interaction of Dislocations with Point Defects during the Annealing of Ion Implanted Si/SiGe/Si(001) Heterostructures, E.A. Stach, R. Hull, J.C. Bean, K.S. Jones and A. Nejim, Microscopy and Microanalysis 4, 294-307 (1998)

  266. Growth Techniques and Procedures, J.C. Bean, chapter 1 in Germanium Silicon: Physics and Materials, R. Hull and J.C. Bean Eds., Semiconductors and Semimetals Volume 56, Academic Press (1998)

  267. Silicon Molecular Beam Epitaxy, J.C. Bean, in “Properties of Crystalline Silicon”, R. Hull, Volume Editor (EMIS-INSPEC, England, 1999)

  268. Self-Organized Nanostructures in Si(1-x)Ge(x) Films on Si(001), C. Teichert, J.C. Bean and M.G. Lagally, Applied Physics A67, 675-685 (1998)

  269. Effect of the Surface upon Misfit Dislocation Velocities during the Growth and Annealing of SiGe/Si(001) heterostructures, E.A. Stach, R. Hull, R.C. Tromp, M.C. Reuter, M. Copel, F.K. LeGuoes, J.C. Bean, J. Appl. Phys. 83(4), 1931-37 (1998)

  270. The Effect of Hydrostatic Pressure on the Raman Spectrum of Ultrathin GenSim Multiple Quantum Wells with n ≤ 4 and m ≤ 4, M. Seon, M. Holtz, T-R Park, O. Brafman and J.C. Bean, Phys. Rev. B58(8) 4779-84 (1998)

  271. Low Temperature Photoluminescence in Ultra-Thin Germanium Quantum Wells, P.A.M. Rodrigues, M.A. Araujo-Silva, G.A. Narvaez, F. Cerdeira and J.C. Bean, Brazilian Journal of Physics 29, 547-550 (1999)

  272. Quantitative Experimental Determination of the Effect of Dislocation-Dislocation Interactions on Strain Relaxation in Lattice Mismatched Heterostructures, pp. 15-20 in “III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics”, Mat. Res. Soc (1999)

  273. In-situ Transmission Electron Microscopy Studies of Interaction between Dislocations in Strained SiGe / Si (100) Heterostructures, E.A. Stach, R. Hull, R.M. Tromp, F.M. Ross, M.C. Reuter and J.C. Bean, Phil. Mag. A80, pp. 2159-200 (2000)

  274. On the Challenges and Opportunities of Sensing Materials Growth within Production Deposition Tools, John C. Bean, S. Kanakaraju and Mark Lau, in “New Methods, Mechanics and Models of Vapor Deposition,” (Mat. Res. Soc. Symp. Vol. 616), pp. 27-39, H.G. Wadley, G.H. Gilmer and W.G. Barker Eds., Materials Reseach Scociety (2000)

  275. X-ray Scattering Studies of Maquette Peptide Monolayers II - Interferometry at the Vapor/Solid Interface, J. Strzalka, X. Chen, C.C. Moser, P.L. Dutton, J.C. Bean and J.Kent Blasie, Langmuir 17, pp. 1193-9 (2001)

  276. Development of Induced Crystallization as a Pattern Transfer Mechanism for Nanofabrication, T. Chraska, M.J. Cabral, S. Mesarovic, D.M. Longo, E.A. Stach, J.C. Bean and R. Hull, in “From Ultralarge-Scle Integration to Photonics to Molecular Electronics” (Mat. Res. Soc. Symp. Vol. 636), pp. D6.2.1-6, Materials Research Society 2001

  277. The Creation of Microelectronics-based Visualizations to Enhance Science Education and Literacy, John C. Bean, James F. Groves, Niladri Kansari, Melissa Appleyard, Chris Lehmbeck, Tony Wayne and Michael Brittingham, to be published in the Proceedings of the 14 th Biennial IEEE/EDS University- Government-Industry Microelectronics Symposium, Richmond VA, June 2001, (Cat. No. 01CH37197), pp. 110-113, IEEE (2001)

  278. Induced Crystallization as a Nonlithographic Pattern Transfer Technique for Nanofabrication, M.J. Cabral, W.K. Lye, J.C. Bean, M.L. Reed, T. Chraska, S. D. Mesarovic, R. Hull and A.B. Phillips, J.Vac.Sci.Technol. B 19(5), pp. 2793-6, Nov 2001

  279. The Creation of Web-Based Interactive Experiments on Microelectronics for Early Engineering Students, Vinu Vijaykumar, Niladri Kansari, James F. Groves and John C. Bean, Proceedings of the 32 nd Annual Frontiers in Education (Cat. No. #02CH37351), pp. T4F-3-7 (2002), IEEE. Selected as "one of ten best of conference" papers.

  280. Growth of Quantum Fortress Structures in Si 1-xGe x /Si via Combinatorial Deposition, Piyush Kumar, Thomas E. Vandervelde, Takeshi Kobayashi, Jennifer L.Gray, Tim Pernell, Jerrold A. Floro, Robert Hull, John C. Bean, Applied Physics Letters 83, 5205-7 (2003)
  281. Selected for republication in the Virtual Journal of Nanoscale Science & Technology (www.vjnano.org), 8(26), Dec 29 2005

  282. Precision placement of heteroepitaxial semiconductor quantum dots , R. Hull, J. L. Gray, M. Kammler T. Vandervelde, T. Kobayashi, P. Kumar, T. Pernell, J. C. Bean, J. A. Floro and F. M. Ross, Materials Science and Engineering B, Volume 101, Issues 1-3, pp. 1-8 , 15 August 2003

  283. Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system, J. L. Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean and T.E. Vandervelde Microscopy of Semiconducting Materials Conference (Inst. of Phys. Conference Series No.180). Inst. of Phys. 2004, pp.243-6. Bristol , UK .

  284. Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga + focused ion beam-guided growth techniques, T. E. Vandervelde, S. Atha, T. L. Pernell, R. Hull, and J.C. Bean, Self-Organized Processes in Semiconductor Heteroepitaxy Symposium (Mater. Res. Soc. Symposium Proceedings Vol.794). Mater. Res. Soc. 2004, pp.111-16. Warrendale , PA , USA .

  285. Analysis of the 3D Relationship of Ge Quantum dots in a Si Matrix using Focused Ion Beam Tomography , A.J. Kubis, R. Hull, T.E. Vandervelde, J.C. Bean, and D. Dunn, Mat. Res. Soc. Symp. Proc. 818, M14.6.1 - M14.6.7 (2004)

  286. Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata, T.E. Vandervelde, R. Kalas, P. Kumar, T. Kobayashi, T.L. Pernell, and J.C. Bean, J. Appl. Phys. 97, 043513 (2005)
  287. Selected for republication in the Virtual Journal of Nanoscale Science & Technology (www.vjnano.org), 11(5), Feb 7, 2006

  288. Nanowell Device For The Electrical Characterization Of Metal-Molecule-Metal Junctions, Nabanita Majumdar, Nadine Gergel, David Routenberg, L. R. Harriott, J. C. Bean, B. Li and L. Pu, Y. Yao and J. M. Tour, Journal of Vacuum Science and Technology B23(4), 1417-21 (Jul/Aug 2005)
  289. Reprinted in the Virtual Journal of Nanoscale Science and Technology (www.vjnano.org), 12(5), August 1, 2005

  290. Study of the Room Temperature Molecular Memory Observed from a Nanowell Device, N. Gergel, N.Majumdar, K. Keyvanfar, N. Swami, L. R. Harriott, J.C. Bean, G. Pattanaik, G. Zangari, Y. Yao, and J.M. Tour, Journal of Vacuum Science and Tecnology A23(4), 880-885 (Jul/Aug 2005)

  291. The Electrical Behavior of Nitro Oligo(Phenylene Ethnylene)s in Pure and Mixed Monolayer, N. Majumdar, N.Gergel, L. R. Harriott, J.C. Bean, G. Pattanaik, G. Zangari, Y. Yao, and J.M. Tour, Journal of Electronic Materials, vol. 35, no. 1, 140-146 (2006)

  292. Analysis of the 3D relationship of Ge quantum dots in a Si matrix using focused ion beam tomography , A.J. Kubis, T.E. Vandervelde, J.C. Bean, D. Dunn, R. Hull, Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory. Materials Res. Soc. 2004, pp.411-17. Warrendale , PA , USA .

  293. Synthesis and Study of the First Optically Active Molecular Electronic Wires, Yu-Liang Zhu, Nadine Gergel, Nabanita Majumdar, Lloyd R. Harriott, John C. Bean and Lin Pu, Organic Letters 8(3), 355-358 (2006)

  294. Design Approaches for Hybrid CMOS/Molecular Memory based on Experimental Device Data, Garrett S. Rose, Adam C. Cabe, Nadine GergelHackett, Nabanita Majumdar, Mircea R. Stan, John C. Bean, Lloyd R. Harriott, Yuxing Yao, and James M. Tour, Proceedings of the 16th ACM Great Lakes symposium on VLSI, Pages: 2 - 7 (2006), Philadelphia , PA , USA, ISBN:1-59593-347-6. Selected as conference “best paper.”

  295. Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga+ focused ion beam-guided growth techniques, T.E. Vandervelde, S. Atha, T.L. Pernell, R. Hull, and J.C. Bean, J. Vac. Sci. Tech. A, vol 24(2), pp. 375-81 (2006)
  296. Selected for republication in the Virtual Journal of Nanoscale Science & Technology (www.vjnano.org), 13(10), March 13, 2006

  297. Analysis of Three-Dimensional Ordering of Epitaxial Ge Quantum using Focused Ion Beam Tomography, Alan J. Kubis, Thomas E. Vandervelde, John C. Bean, Derren N. Dunn, and Robert Hull, Appl. Phys. Lett. 88, 263103 (2006)
  298. Selected for republication in the Virtual Journal of Nanoscale Science & Technology (www.vjnano.org), 14(2), July 11 2006

  299. The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed, T.E. Vandervelde, A.J. Kubis, K. Sun, J. Merz, R. Hull, and J.C. Bean, J. Appl. Phys. 99, 124301 (2006)
  300. Selected for republication in the Virtual Journal of Nanoscale Science & Technology, 14(1), July 4 (2006) (www.vjnano.org)

  301. The Effects of Molecular Environments on the Electrical Switching with Memory of Nitro Molecules, N. Gergel, N. Majumdar, Z. Martin, N. Swami, L.R. Harriott, J.C. Bean, G. Pattanaik, G. Zangari, Y. Zhu, L. Pu, Y. Yao, and J.M. Tour, J. Vac. Sci. Technol. A24(4), pp.1243-48 (2006)
  302. Selected for republication in the Virtual Journal of Nanoscale Science & Technology, July 4 (2006) (www.vjnano.org)

  303. Vapor Phase Deposition of OPE Molecules for use in Molecular Electronic Devices, Nadine Gergel-Hackett, Michael J. Cabral, Timothy L. Pernell, Bo Chen, Meng Lu, James Tour, Lloyd R. Harriott and John C. Bean, J. Vac. Sci. Technol. B25(1), pp. 252-257 (2007)
  304. Selected for republication in the Virtual Journal of Nanoscale Science & Technology, February (2007) (www.vjnano.org)

  305. Designing CMOS/Molecular Memories while Considering Device Parameter Variations, Garrett S. Rose, Adam C. Cabe, Nadine Gergel-Hackett, Nabanita Majumdar, Mircea R. Stan, John C. Bean, Lloyd R. Harriott, Yuxing Yao and James M. Tour, ACM Journal of Emerging Technologies in Computing Systems 3(1), p. 1-12 (2007)

  306. Fabrication and Characterization of Interconnected Nano-well Molecular Electronic Devices in Cross-bar Architecture, Z.L. Martin, N. Majumdar, M.J. Cabral, F. Camacho-Alanis, N. Gergel-Hackett, N. Swami, J.C. Bean, L. R. Harriott , Y. Yao, J. M. Tour, D. Long and R. Shashidhar, accepted for publication in the IEEE Transactions on Nanotechnology (2009)

  307. Addition Reaction and Characterization of Chlorotris(triphenylphosphine) iridium(I) on Silicon(111) Surfaces, Gary Shambat, Albert Deberardinis, Bo Chen, Petra Reinke, B. Jill Venton, Lin Pu, James Tour, & John C. Bean, Applied Surface Science 225(20), 8533-8538 (2009)

  308. Low Dose Patterning of HSQ for Use as a Silicon Etch Mask, Kian Keyvanfar, Hoa Nguyen, Deborah C. Kidd, Michael J. Cabral, Lloyd R. Harriott, and John C. Bean, submitted to the Journal of Vacuum Science and Technology

  309. Ultra-Low Dose Exposure Using Hydrogen Silsesquioxane for Electron Beam Lithography Using Non-Aqueous Developer, Deborah C. Kidd, Kiran Yadava, Kian Keyvanfar, Michael J. Cabral, John C. Bean, and Lloyd R. Harriott, submitted to the Journal of Vacuum Science and Technology

  310. Dopant Passivation and Work Function Tuning through Attachment of Heterogeneous Organic Monolayers on Silicon in Ultrahigh Vacuum, Ashley John Cooper, Kian Keyvanfar, Albert Deberardinis, Lin Pu, and John C. Bean, Applied Surface Science 257, pp. 6138-6144 (2011)