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| 1) |
Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C.R. Chiu and J.M. Poate. U.S. Patent 4,492,971 |
| 2) |
Germanium P-I-N Photodetector on Silicon Substrate, J.C. Bean, A. Kastalsky and S. Luryi. U.S. Patent 4,514,748 |
| 3) |
Method for Epitaxially Growing Ge(x)Si(1-x) Layers on Si Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory. U.S. Patent 4,529,455 |
| 4) |
Method for Producing Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C. R. Chiu and J.M. Poate. U.S. Patent 4,554,045 |
| 50 |
Device Using Ordered Semiconductor Alloy, J.C. Bean and A. Ourmazd. U.S. Patent 4,661,829 |
| 6 ) |
Apparatus for Simultaneous Molecular Beam Deposition on a Plurality of Substrates, J.C. Bean. U.S. Patent 4,681,773 |
| 7) |
Silicon Germanium Photodetector, J.C. Bean, S. Luryi, and T.P. Pearsall. U.S. Patent 4,725,870 |
| 8) |
Device Having Strain Induced Region of Altered Bandgap, J.C. Bean, D.V. Lang, T.P. Pearsall, R.People, and H. Temkin. U.S. Patent 4,772,924 |
| 9) |
Semiconductor Heterostructures Having Ge(x)Si(1-x) Layers on Silicon Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory. U.S. Patent 4,861,393 |
| 10) |
Method of Controlling the Order-Disorder State in a Semiconductor Device. J.C. Bean and A. Ourmazd. U.S. Patent 4,879,256 |
| 11) |
Article Comprising a Lattice-Mismatched Semiconductor Heterostructure. J.C. Bean, G.S. Higashi, R. Hull and L. Peticolas. U.S. Patent 5,091,767 |
| 120 |
Method of Making a Poliysilicon Emitter Bipolar Transistor. J.C. Bean, G.S. Higashi and B. Jalali-Farahani. U.S. Patent 5,096,840 |
| 13) |
Method of Fabricating Patterned Epitaxial Silicon Films and Devices Made Thereby, J.C. Bean and G.A. Rozgonyi. U.S. Patent 5,134,090 |
| 14) |
Article Comprising an Epitaxial Multilayer Mirror, J.C. Bean and D.L. Windt. U.S. Patent 5,244,749 |
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