John C. Bean - Patents
 
1)

Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C.R. Chiu and J.M. Poate. U.S. Patent 4,492,971

2) Germanium P-I-N Photodetector on Silicon Substrate, J.C. Bean, A. Kastalsky and S. Luryi. U.S. Patent 4,514,748
3) Method for Epitaxially Growing Ge(x)Si(1-x) Layers on Si Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory. U.S. Patent 4,529,455
4) Method for Producing Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C. R. Chiu and J.M. Poate. U.S. Patent 4,554,045
5) Device Using Ordered Semiconductor Alloy, J.C. Bean and A. Ourmazd. U.S. Patent 4,661,829
6) Apparatus for Simultaneous Molecular Beam Deposition on a Plurality of Substrates, J.C. Bean. U.S. Patent 4,681,773
7) Silicon Germanium Photodetector, J.C. Bean, S. Luryi, and T.P. Pearsall. U.S. Patent 4,725,870
8) Device Having Strain Induced Region of Altered Bandgap, J.C. Bean, D.V. Lang, T.P. Pearsall, R.People, and H. Temkin. U.S. Patent 4,772,924
9)

Semiconductor Heterostructures Having Ge(x)Si(1-x) Layers on Silicon Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory. U.S. Patent 4,861,393

10) Method of Controlling the Order-Disorder State in a Semiconductor Device. J.C. Bean and A. Ourmazd. U.S. Patent 4,879,256
11) Article Comprising a Lattice-Mismatched Semiconductor Heterostructure. J.C. Bean, G.S. Higashi, R. Hull and L. Peticolas. U.S. Patent 5,091,767
12) Method of Making a Poliysilicon Emitter Bipolar Transistor. J.C. Bean, G.S. Higashi and B. Jalali-Farahani. U.S. Patent 5,096,840
13) Method of Fabricating Patterned Epitaxial Silicon Films and Devices Made Thereby, J.C. Bean and G.A. Rozgonyi. U.S. Patent 5,134,090
14) Article Comprising an Epitaxial Multilayer Mirror, J.C. Bean and D.L. Windt. U.S. Patent 5,244,749